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High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD

Type:
Conference Proceedings
Info:
CS MANTECH Conference, April 23rd - 26th, 2012, Boston, Massachusetts, USA
Date:
2012-04-23
DOI:
http://gaasmantech.com/Digests/2012/papers/8b.1.056.pdf

Author Information

Name Institution
P. A. von HauffUniversity of Alberta
Kyle BotheUniversity of Alberta
Amir AfsharUniversity of Alberta
A. Foroughi-AbariUniversity of Alberta
Douglas W. BarlageUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma ZrO2

Hardware used: Unknown
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Mobility
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

GaN

Notes

648