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The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films

Type:
Journal
Info:
Chem. Mater. 2009, 21, 4374-4379
Date:
2009-06-20
DOI:
http://dx.doi.org/10.1021/cm9005234

Author Information

Name Institution
Seok-Jun WonSeoul National University
Ju Youn KimSamsung Electronics Co.
Gyu-Jin ChoiSeoul National University
Jaeyeong HeoSeoul National University
Cheol Seong HwangSeoul National University
Hyeong Joon KimSeoul National University

Films

Plasma ZrO2

Hardware used: ASM Genitech PEALD
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 255-305C

Plasma ZrO2

Hardware used: ASM Genitech PEALD
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
N2O, Nitrous Oxide
CAS#: 10024-97-2
Deposition Temperature Range = 255-305C

Plasma HfO2

Hardware used: ASM Genitech PEALD
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 280C

Plasma HfO2

Hardware used: ASM Genitech PEALD
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
N2O, Nitrous Oxide
CAS#: 10024-97-2
Deposition Temperature = 280C

Plasma TiO2

Hardware used: ASM Genitech PEALD
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 280C

Plasma TiO2

Hardware used: ASM Genitech PEALD
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
N2O, Nitrous Oxide
CAS#: 10024-97-2
Deposition Temperature = 280C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Areal Density
Analysis: XRF, X-Ray Fluorescence
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4285A LCR

Characteristic: Breakdown Voltage Lifetime
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4285A LCR

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG Sigma Probe

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: JEOL JSPM-5200

Substrates

Silicon

Notes

733