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Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

Type:
Journal
Info:
Microelectronic Engineering 87 (2010) 301 - 305
Date:
2009-06-22
DOI:
http://dx.doi.org/10.1016/j.mee.2009.06.016

Author Information

Name Institution
T. BertaudUniversité de Savoie
C. BermondUniversité de Savoie
T. LacrevazUniversité de Savoie
Christophe ValléeFrench National Centre for Scientific Research (CNRS)
Y. MorandSTMicroelectronics
B. FléchetUniversité de Savoie
A. FarcySTMicroelectronics
Mickaël Gros-JeanSTMicroelectronics
S. BlonkowskiSTMicroelectronics

Films

Plasma ZrO2

Hardware used: Unknown
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma HfO2

Hardware used: Unknown
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Novocontrol Dielectric Spectrometer

Characteristic: Conductance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Novocontrol Dielectric Spectrometer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Novocontrol Dielectric Spectrometer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Conductance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Anritsu 37387C Vector Network Analyzer

Characteristic: Conductance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Anritsu 37387C Vector Network Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Anritsu 37387C Vector Network Analyzer

Substrates

TiN
SiO2

Notes

Paper lists TEMAZr as the precursor but calls it "TriEthyl MethAcrylate de Zirconium".
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