About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process

Type:
Journal
Info:
Thin Solid Films Volume 577, 27 February 2015, Pages 143-148
Date:
2015-01-21
DOI:
http://dx.doi.org/10.1016/j.tsf.2015.01.040

Author Information

Name Institution
Jong Geol LeeKyung Hee University
Hyun Gi KimKyung Hee University
Sung Soo KimKyung Hee University

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 120C

Plasma ZrO2

Hardware used: Custom
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 120C

Film/Plasma Properties

Characteristic: Unknown
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Unknown
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Optical Properties
Analysis: Optical Transmission
Diagnostic: -

Substrates

PEN, Polyethylene Napthalate

Notes

PEALD Al2O3/ZrO2 nanolaminate for flexible display diffusion barrier
324