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PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 7 (12) F81-F84 (2004)
Date:
2004-06-25

Author Information

Name Institution
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Jin Ho LeeElectronics and Telecommunication Research Institute, (ETRI)

Films



Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Etch Rate
Analysis: Custom

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)
ITO

Notes

1237