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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

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Sun Jin Yun Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Sun Jin Yun returned 15 record(s).

NumberTitle
1Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
2Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
3Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
4Optical and Electrical Properties of TixSi1-xOy Films
5Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
6Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
7Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
8Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
9Optical and Electrical Properties of AlxTi1-xO Films
10Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
11Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
12Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
13PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
14Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
15Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric