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Optical and Electrical Properties of AlxTi1-xO Films

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 56, No. 1, January 2010, pp. 96-99
Date:
2009-10-12
DOI:
http://dx.doi.org/10.3938/jkps.56.96

Author Information

Name Institution
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Seong Hyun LeeUniversity of Science and Technology

Films

Plasma AlTixOy

Hardware used: Custom
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-200C

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Reflectivity
Analysis: -
Diagnostic: -

Substrates

Si(100)
ITO

Notes

40