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Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
ETRI Journal, Volume 27, Number 1, February 2005
Date:
2005-02-01
DOI:
http://dx.doi.org/10.4218/etrij.05.0204.0023

Author Information

Name Institution
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Sun Jin YunElectronics and Telecommunication Research Institute, (ETRI)
Jin Ho LeeElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma SiO2

Hardware used: Custom
4DMASi, TDMASi, (Me2N)4Si, [(CH3)2N]4Si, Tetrakis(DiMethylAmido) Silane, Silicon Dimethylamide
CAS#: 1624-01-7
Tris(dimethylamino)chlorosilane, 3DMASiCl
CAS#: 13307-05-6
N2, Nitrogen
CAS#: 7727-37-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-250C

Thermal SiO2

Hardware used: Custom
4DMASi, TDMASi, (Me2N)4Si, [(CH3)2N]4Si, Tetrakis(DiMethylAmido) Silane, Silicon Dimethylamide
CAS#: 1624-01-7
Tris(dimethylamino)chlorosilane, 3DMASiCl
CAS#: 13307-05-6
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 100-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Etch Rate
Analysis: Wet Etch
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Schottky Analysis
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Poole-Frenkel Analysis
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Si(100)
ITO

Notes

26