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Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors

Type:
Journal
Info:
AIP ADVANCES 10, 015239 (2020)
Date:
2020-01-03
DOI:
http://dx.doi.org/10.1063/1.5126151

Author Information

Name Institution
Wan-Ho ChoiHanyang University
Min Jung KimHanyang University
Woojin JeonKyung Hee University
Jin-Seong ParkHanyang University

Films

Plasma ZrO2

Hardware used: Unknown
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma SiO2

Hardware used: Unknown
Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS
CAS#: 908831-34-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Threshold Voltage
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: Mobility
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: Subthreshold Swing
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: Hysteresis
Analysis: Transistor Characterization
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe II

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku D/Max-RB

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Silicon
SiO2
ZrO2

Notes

1435