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Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 031510 (2017)
Date:
2017-04-12
DOI:
http://dx.doi.org/10.1116/1.4982224

Author Information

Name Institution
Hanearl JungYonsei University
Il-Kwon OhYonsei University
Seungmin YeoYonsei University
Hyungjun KimYonsei University
Su Jeong LeeYonsei University
Yun Cheol KimYonsei University
Jae Min MyoungYonsei University
Soo-Hyun KimYeungnam University
Jun Hyung LimSamsung Display Co.
Sunhee LeeSamsung Display Co.

Films

Plasma ZrO2

Hardware used: NCD Technology Lucida MP-100
Tris(dimethylamino)cyclopentadienyl Zirconium, CpZr(NMe2)3, Air Liquide ZyALDTM
CAS#: 33271-88-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: NEC Pelletron 6SDH-2

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Current Density
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4155C Semiconductor Parameter Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent 4155C Semiconductor Parameter Analyzer

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Agilent 4155C Semiconductor Parameter Analyzer

Substrates

Silicon

Notes

1038