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Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure

Type:
Journal
Info:
Journal of Alloys and Compounds, Volume 858, 2021, Pages 157713
Date:
2020-10-23
DOI:
https://doi.org/10.1016/j.jallcom.2020.157713

Author Information

Name Institution
A. M. MumlyakovRussian Academy of Sciences
Max V. ShibalovRussian Academy of Sciences
I. V. TrofimovRussian Academy of Sciences
M.G. VerkholetovRussian Academy of Sciences
Alexei P. OrlovRussian Academy of Sciences
G.D. DiudbinRussian Academy of Sciences
S.A. EvlashinSkolkovo Institute of Science and Technology
P.A. NekludovaRussian Academy of Sciences
Y. V. AnufrievRussian Academy of Sciences
A. M. TagachenkovRussian Academy of Sciences
E. V. ZenovaRussian Academy of Sciences
Michael A. TarkhovRussian Academy of Sciences

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 250-300C

Plasma HfO2

Hardware used: Oxford Instruments FlexAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 290-300C

Plasma Ta2O5

Hardware used: Oxford Instruments FlexAL
Tert-Butylimido,Tris(diMEthylamino)Tantalum, Ta[N(CH3)2]3[=NC(CH3)3], TBTMET, TBTDMT
CAS#: 69039-11-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Mo

Notes

1581