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Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation

Type:
Journal
Info:
RSC Adv., 2016, 6, 97720-97727
Date:
2016-09-26
DOI:
http://dx.doi.org/10.1039/C6RA19442G

Author Information

Name Institution
Rajbir SinghCSIR-National Physical Laboratory (CSIR-NPL)
Vandana PanwarCSIR-National Physical Laboratory (CSIR-NPL)
Jagannath PanigrahiCSIR-National Physical Laboratory (CSIR-NPL)
P. K. SinghCSIR-National Physical Laboratory (CSIR-NPL)

Films

Plasma HfO2

Hardware used: Picosun R200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Surface Recombination Velocity
Analysis: -
Diagnostic: -

Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Silicon

Notes

958