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The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures

Type:
Journal
Info:
Facta universitatis - series: Electronics and Energetics 2014 Volume 27, Issue 4, Pages: 621-630
Date:
2014-07-21
DOI:
http://dx.doi.org/10.2298/FUEE1404621P

Author Information

Name Institution
Albena PaskalevaBulgarian Academy of Sciences

Films

Plasma HfO2

Hardware used: Beneq TFS-200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Thermal HfO2

Hardware used: Beneq TFS-200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Notes

197