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Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware

Type:
Journal
Info:
Adv. Electron. Mater. 2022, 8, 2101395
Date:
2022-03-08

Author Information

Name Institution
Laura Bégon-LoursIBM Research, Zurich Research Lab
Mattia HalterIBM Research, Zurich Research Lab
Francesco Maria PuglisiUNIMORE - Dipartimento di Ingegneria 'Enzo Ferrari'
Lorenzo BenattiUNIMORE - Dipartimento di Ingegneria 'Enzo Ferrari'
Donato Francesco FalconeIBM Research, Zurich Research Lab
Youri PopoffIBM Research, Zurich Research Lab
Diana Dávila PinedaIBM Research, Zurich Research Lab
Marilyne SousaIBM Research, Zurich Research Lab
Bert Jan OffreinIBM Research, Zurich Research Lab

Films

Plasma TiN


Plasma WO3



Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Interfacial Layer
Analysis: XRR, X-Ray Reflectivity

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements

Characteristic: Ferroelectricity
Analysis: Ferroelectrical Testing

Substrates

SiO2

Notes

1738