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Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Microelectronic Engineering 147 (2015) 231 - 234
Date:
2015-04-18
DOI:
http://dx.doi.org/10.1016/j.mee.2015.04.102

Author Information

Name Institution
Vladamir DjaraIBM Research, Zurich Research Lab
Marilyne SousaIBM Research, Zurich Research Lab
Nikola DordevicIBM Research, Zurich Research Lab
Lukas CzornomazIBM Research, Zurich Research Lab
Veeresh DeshpandeIBM Research, Zurich Research Lab
Chiara MarchioriIBM Research, Zurich Research Lab
Emanuele UccelliIBM Research, Zurich Research Lab
Daniele CaimiIBM Research, Zurich Research Lab
Christophe RosselIBM Research, Zurich Research Lab
Jean FompeyrineIBM Research, Zurich Research Lab

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Band Gap
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

InGaAs

Notes

351