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Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks

Type:
Journal
Info:
Applied Physics Letters 108, 242905 (2016)
Date:
2016-05-31
DOI:
http://dx.doi.org/10.1063/1.4953787

Author Information

Name Institution
A. G. ChernikovaMoscow Institute of Physics and Technology
Dmitry S. KuzmichevMoscow Institute of Physics and Technology
D. V. NegrovMoscow Institute of Physics and Technology
M. G. KozodaevMoscow Institute of Physics and Technology
S. N. PolyakovTechnological Institute for Superhard and Novel Carbon Materials
Andrey M. MarkeevMoscow Institute of Physics and Technology

Films

Plasma TiN

Hardware used: Unknown
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 330C

Plasma HfLaOx

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)3La
CAS#: 68959-87-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 235C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Ferroelectricity
Analysis: -
Diagnostic: -

Characteristic: Electrical Properties
Analysis: -
Diagnostic: -

Substrates

SiO2
TiN
HfLaOx

Notes

864