tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)₃La, CAS# 68959-87-5

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 10 record(s).

Number	Title
1	Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
2	Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
3	Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
4	Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
5	Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
6	Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
7	Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
8	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
9	The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
10	Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition