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Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Thin Solid Films 519 (2010) 362 - 366
Date:
2010-07-26
DOI:
http://dx.doi.org/10.1016/j.tsf.2010.07.108

Author Information

Name Institution
Woo-Hee KimYonsei University
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Kyeong-Ju MoonYonsei University
Jae Min MyoungYonsei University
Hyungjun KimYonsei University

Films

Plasma La2O3

Hardware used: Custom
tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)3La
CAS#: 68959-87-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 200-400C

Thermal La2O3

Hardware used: Custom
tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)3La
CAS#: 68959-87-5
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 200-400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL II

Substrates

Si(001)

Notes

705