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The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD

Type:
Journal
Info:
Journal of The Electrochemical Society, 157 (4) H479-H482 (2010)
Date:
2010-01-07
DOI:
http://dx.doi.org/10.1149/1.3301665

Author Information

Name Institution
Hyungchul KimHanyang University
Sanghyun WooHanyang University
Jaesang LeeHanyang University
Honggyu KimHanyang University
Yongchan KimHanyang University
Hyerin LeeHanyang University
Hyeongtag JeonHanyang University

Films

Plasma La2O3

Hardware used: Custom Remote
tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)3La
CAS#: 68959-87-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Notes

1353