Hyungchul Kim Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Hyungchul Kim returned 12 record(s).

Number	Title
1	Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO₂/SiO₂/Si and HfO₂/SiO_xN_y/Si Stack Structures Formed by Remote Plasma Technique
2	Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO₂ Thin Films
3	Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N₂ and N₂O Plasma Post-Treatments
4	Effects of an Al₂O₃ capping layer on La₂O₃ deposited by remote plasma atomic layer deposition
5	Atomic Layer Deposition of HfO₂ Thin Films on Ultrathin SiO₂ Formed by Remote Plasma Oxidation
6	Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al₂O₃ film as the tunnel and blocking oxides for nonvolatile memory applications
7	The Effects of Annealing Ambient on the Characteristics of La₂O₃ Films Deposited by RPALD
8	Effect of Buffer Layer for HfO₂ Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
9	The Effects of Radio Frequency Plasma Power on Al₂O₃ Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
10	Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO₂ for Nonvolatile Memory Devices
11	Atomic layer deposited HfO₂/HfSi_xO_yN_z stacked gate dielectrics for metal-oxide-semiconductor structures
12	Characteristics of Atomic-Layer-Deposited HfO₂ Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer