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Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 01A104 (2012)
Date:
2011-08-23

Author Information

Name Institution
Jaesang LeeHanyang University
Hyungchul KimHanyang University
Taeyong ParkHanyang University
Youngbin KoHanyang University
Jaehun RyuHanyang University
Heeyoung JeonHanyang University
Jingyu ParkHanyang University
Hyeongtag JeonHanyang University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)
Al2O3
Au

Notes

634