About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 52, No. 4, pp. 1114-1119
Date:
2008-01-02
DOI:
https://doi.org/10.3938/jkps.52.1114

Author Information

Name Institution
Hyungseok HongHanyang University
Seokhoon KimHanyang University
Sanghyun WooHanyang University
Hyungchul KimHanyang University
Honggyu KimHanyang University
Wooho JeongHanyang University
Sunyeol JeonHanyang University
Seokhwan BangHanyang University
Seungjun LeeHanyang University
Hyeongtag JeonHanyang University

Films

Plasma HfO2

Hardware used: Custom
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Substrates

Hf

Notes

1198