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Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique

Type:
Journal
Info:
Japanese Journal of Applied Physics 47, 6196--6199 (2008)
Date:
2008-04-06
DOI:
http://dx.doi.org/10.1143/jjap.47.6196

Author Information

Name Institution
Sanghyun WooHanyang University
Hyungseok HongHanyang University
Seokhoon KimHanyang University
Hyungchul KimHanyang University
Jinwoo KimHanyang University
Hyeongtag JeonHanyang University
Choelhwyi BaeHanyang University
Takayuki OkadaToyohashi University of Technology
Tomomi SawadaToyohashi University of Technology
Makoto IshidaToyohashi University of Technology

Films

Plasma HfO2

Hardware used: Unknown
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: HP 4156A

Substrates

Silicon
SiO2
SiOxNy

Notes

1334