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Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films

Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (1) H21-H24 (2011)
Date:
2010-08-11
DOI:
http://dx.doi.org/10.1149/1.3511769

Author Information

Name Institution
Hyungchul KimHanyang University
Sanghyun WooHanyang University
Jaesang LeeHanyang University
Yongchan KimHanyang University
Hyerin LeeHanyang University
Ik-Jin ChoiHanyang University
Young-Do KimHanyang University
Chin-Wook ChungHanyang University
Hyeongtag JeonHanyang University

Films

Plasma HfO2

Hardware used: Custom Direct Capacitively Coupled Plasma
N2, Nitrogen
CAS#: 7727-37-9
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Plasma Species
Analysis: Langmuir Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Notes

683