About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Custom Remote Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Custom Remote hardware returned 16 records.

NumberTitle
1Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
2Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
3Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
4Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
5The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
6The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
7HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
8Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
9Characteristics of HfO2 thin films grown by plasma atomic layer deposition
10Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
11Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection
12Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
13Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD
14Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
15Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
16Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl