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Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods

Type:
Journal
Info:
Journal of Applied Physics 98, 094504 (2005)
Date:
2005-09-23
DOI:
http://dx.doi.org/10.1063/1.2121929

Author Information

Name Institution
Jinwoo KimHanyang University
Seokhoon KimHanyang University
Hyunseok KangHanyang University
Jihoon ChoiHanyang University
Hyeongtag JeonHanyang University
Mannho ChoKorea Research Institute of Standards and Science (KRISS)
Kwunbum ChungKorea Research Institute of Standards and Science (KRISS)
Sungkwun BackGwanju Institute of Science and Technology (GIST)
Kyungdong YooHynix Semiconductor
Choelhwyi BaeNorth Carolina State University

Films

Plasma HfO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma HfO2

Hardware used: Custom Remote
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: MEIS, Medium Energy Ion Scattering
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Si(100)

Notes

1244