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Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes

Type:
Journal
Info:
Journal of The Electrochemical Society, 152(1) G29-G34 (2005)
Date:
2004-11-17
DOI:
http://dx.doi.org/10.1149/1.1825913

Author Information

Name Institution
Ju Youn KimHanyang University
Do Youl KimHanyang University
Hee Ok ParkHanyang University
Hyeongtag JeonHanyang University

Films

Plasma TiN

Hardware used: Custom Remote
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Plasma TiN

Hardware used: Custom Remote
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma TiN

Hardware used: Custom Remote
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: PHI 680 FEAES

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

SiO2

Notes

SiO2 pirahna cleaned.
Samples annealed at 450, 500, and 550C for one hour. 450 and 500C annealed samples remained amorphous. 550C annealed sample crystallized.
Hole sidewall and top surface have same C impurity % for PEALD films. MOCVD film with post-dep plasma treatment had higher %C on hole sidewalls compared to top surface.
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