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HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method

Type:
Conference Proceedings
Info:
ECS Transactions, 3 (15) 89-98 (2007)
Date:
2007-07-01
DOI:
http://dx.doi.org/10.1149/1.2721477

Author Information

Name Institution
Seokhoon KimHanyang University
Hyeongtag JeonHanyang University

Films

Plasma HfO2

Hardware used: Custom Remote
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: MEIS, Medium Energy Ion Scattering
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

SiO2
SiOxNy

Notes

1173