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Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (6) G200-G203 (2006)
Date:
2006-02-02
DOI:
http://dx.doi.org/10.1149/1.2189219

Author Information

Name Institution
Seokhoon KimHanyang University
Jinwoo KimHanyang University
Jihoon ChoiHanyang University
Hyunseok KangHanyang University
Hyeongtag JeonHanyang University
Wontae ChoKorea Research Institute of Chemical Technology
Ki-Seok AnKorea Research Institute of Chemical Technology
Taek-Mo ChungKorea Research Institute of Chemical Technology
Yunsoo KimKorea Research Institute of Chemical Technology
Choelhwyi BaeSamsung Electronics Co.

Films

Plasma HfO2

Hardware used: Custom Remote
Hafnium 3-methyl-3-pentoxide, Hf(mp)4
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-325C

Plasma HfO2

Hardware used: Custom Remote
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-325C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Si(100)

Notes

1176