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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis

Type:
Journal
Info:
APL Mater. 9, 031111 (2021)
Date:
2021-03-04
DOI:
https://doi.org/10.1063/5.0035848

Author Information

Name Institution
Takashi OnayaMeiji University
Toshihide NabatameNational Institute for Materials Science (NIMS)
Yong Chan JungUniversity of Texas at Dallas
Heber Hernandez-ArriagaUniversity of Texas at Dallas
Jaidah MohanUniversity of Texas at Dallas
Harrison Sejoon KimUniversity of Texas at Dallas
Naomi SawamotoMeiji University
Chang-Yong NamBrookhaven National Laboratory
Esther H. R. TsaiBrookhaven National Laboratory
Takahiro NagataNational Institute for Materials Science (NIMS)
Jiyoung KimUniversity of Texas at Dallas
Atsushi OguraMeiji University

Films

Thermal HfZrO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Plasma HfZrO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Ferroelectricity
Analysis: P-V, Polarization-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIWAXS, Grazing Incidence Wide Angle X-ray Scattering
Diagnostic: Synchrotron

Substrates

TiN

Notes

1687