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Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 66, No. 12, pp. 1885-1888
Date:
2015-05-27
DOI:
http://dx.doi.org/10.3938/jkps.66.1885

Author Information

Name Institution
Jae-Sung ChoiHanyang University
Jea-Gun ParkHanyang University

Films

Other HfO2

Hardware used: CN1 Atomic Premium
NH3, Ammonia
CAS#: 7664-41-7
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Other Al2O3

Hardware used: CN1 Atomic Premium
NH3, Ammonia
CAS#: 7664-41-7
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Frequency Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Interface Trap Density
Analysis: Conductance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

InGaAs

Notes

InGaAs substrate exposed to NH3 plasma before thermal ALD HfO2/Al2O3 nanolaminate deposition.
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