Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
Info:
Journal of the Korean Physical Society, Vol. 66, No. 12, pp. 1885-1888
Author Information
Films
Film/Plasma Properties
Analysis: C-V, Capacitance-Voltage Measurements
Analysis: C-V, Capacitance-Voltage Measurements
Analysis: I-V, Current-Voltage Measurements
Analysis: Conductance-Voltage Measurements
Substrates
Notes
| InGaAs substrate exposed to NH3 plasma before thermal ALD HfO2/Al2O3 nanolaminate deposition. |
| 359 |