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Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications

Type:
Journal
Info:
Nanoscale Research Letters (2015) 10:135
Date:
2015-03-02
DOI:
http://dx.doi.org/10.1186/s11671-015-0846-y

Author Information

Name Institution
Lai-Guo WangNanjing University
Xu QianNanjing University
Yanqiang CaoNanjing University
Zheng-Yi CaoNanjing University
Guo-Yong FangNanjing University
Aidong LiNanjing University
Di WuNanjing University

Films

Plasma TiN

Hardware used: Picosun R200
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 400C

Thermal HfO2

Hardware used: Picosun R200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Thermal Al2O3

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F20 S-Twin

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Sopra GES-5E

Substrates

TiN

Notes

Picosun SUNALE R200 PEALD TiN with thermal Al2O3 and HfO2 for resistive RAM study.
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