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Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications

Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (3) H196-H201 (2008)
Date:
2007-11-09
DOI:
http://dx.doi.org/10.1149/1.2827995

Author Information

Name Institution
Steven ConsiglioState University of New York at Albany
Wanxue ZengState University of New York at Albany
Nathaniel BerlinerState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma HfNx

Hardware used: Aixtron Genus Stratagem 200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer PHI600

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer PHI600

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: Dynamitron linear particle accelerator

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: Dynamitron linear particle accelerator

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Thermal Stability
Analysis: Custom
Diagnostic: Custom

Substrates

SiO2

Notes

1345