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Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 40(2) 2022 022405
Date:
2022-01-20
DOI:
http://dx.doi.org/10.1116/6.0001607

Author Information

Name Institution
Beibei GeTohoku University
Daisuke OhoriTohoku University
Yi-Ho ChenNational Yang Ming Chiao Tung University
Takuya OzakiTohoku University
Kazuhiko EndoTohoku University
Yiming LiNational Yang Ming Chiao Tung University
Jenn-Hwan TarngNational Yang Ming Chiao Tung University
Seiji SamukawaTohoku University

Films

Other HfO2

Hardware used: Custom
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 30C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Shimadzu SPM9500

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

SiO2

Notes

Not plasma ALD. Neutral beam ALD.
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