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Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 36, 062901 (2018)
Date:
2018-09-05
DOI:
http://dx.doi.org/10.1116/1.5045634

Author Information

Name Institution
Vladimir KolkovskyFraunhofer IPMS
Sebastian ScholzFraunhofer IPMS
Valery KolkovskyTechnische Universität Dresden
Jan-Uwe SchmidtFraunhofer IPMS
Rene HellerInstitute of Ion Beam Physics and Materials Research

Films

Thermal HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 235C

Other HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O3, Ozone
CAS#: 10028-15-6
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 235C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: NRA, Nuclear Reaction Analysis
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Conductance
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

SiO2

Notes

1292