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Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents

Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015
Date:
2014-10-10
DOI:
http://dx.doi.org/10.1116/1.4899181

Author Information

Name Institution
Kensaku KanomataYamagata University

Films

Plasma HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 25C

Plasma HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Substrates

Notes

232