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Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:324
Date:
2017-04-20
DOI:
http://dx.doi.org/10.1186/s11671-017-2098-5

Author Information

Name Institution
Xiao-Ying ZhangXiamen University of Technology
Chia-Hsun HsuDa-Yeh University
Shui-Yang LienDa-Yeh University
Songyan ChenXiamen University
Wei HuangXiamen University
Chih-Hsiang YangNational Chung-Hsing University
Chung-Yuan KungNational Chung-Hsing University
Wen-Zhang ZhuXiamen University of Technology
Fei-Bing XiongXiamen University of Technology
Xian-Guo MengXiamen University of Technology

Films

Plasma HfO2

Hardware used: Picosun R200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL 2100F

Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL 2100F

Characteristic: Interlayer
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL 2100F

Substrates

Si(100)

Notes

1032