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Symmetrical Al2O3-based passivation layers for p- and n-type silicon

Type:
Conference Proceedings
Info:
Solar Energy Materials and Solar Cells, Volume 131, December 2014, Pages 72-76, SI: SiliconPV 2014
Date:
2014-06-02

Author Information

Name Institution
Daniel Kai SimonNaMLab gGmbH

Films

Thermal Al2O3


Thermal HfO2


Plasma SiO2

Hardware used: Unknown


CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

Notes

PEALD SiO2 and thermal ALD Al2O3 and HfO2 for PV passivation application.
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