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Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si

Type:
Journal
Info:
Journal of Vacuum Science & Technology B 33, 01A101 (2015)
Date:
2014-08-18
DOI:
http://dx.doi.org/10.1116/1.4895010

Author Information

Name Institution
Duo CaoChinese Academy of Sciences
Xinhong ChengChinese Academy of Sciences
Li ZhengChinese Academy of Sciences
Dawei XuChinese Academy of Sciences
Zhongjian WangChinese Academy of Sciences
Chao XiaChinese Academy of Sciences
Lingyan ShenChinese Academy of Sciences
Yuehui YuChinese Academy of Sciences
DaShen ShenUniversity of Alabama in Huntsville

Films

Plasma HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Philips CM200-FEG

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Synchrotron

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Conduction Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Substrates

Si(100)

Notes

353