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Sub-10-nm ferroelectric Gd-doped HfO2 layers

Type:
Journal
Info:
Applied Physics Letters 120, 172901 (2022)
Date:
2022-04-16
DOI:
http://dx.doi.org/10.1063/5.0088505

Author Information

Name Institution
E. V. SkopinGrenoble Alps University (UGA)
N. GuillaumeGrenoble Alps University (UGA)
L. AlrifaiGrenoble Alps University (UGA)
Patrice GononGrenoble Alps University (UGA)
Ahmad BsiesyGrenoble Alps University (UGA)

Films

Plasma TiN

Hardware used: Oxford Instruments FlexAL
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 250C

Plasma Gd:HfO2

Hardware used: Oxford Instruments FlexAL
Tris(cyclopentadienyl)gadolinium, Gd(Cp)3
CAS#: 1272-21-5
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Empyrean

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Remanent Polarization
Analysis: P-V, Polarization-Voltage Measurements
Diagnostic: aixACCT TF Analyzer 3000

Characteristic: Coercive Field
Analysis: P-V, Polarization-Voltage Measurements
Diagnostic: aixACCT TF Analyzer 3000

Substrates

SiO2
TiN

Notes

1688