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Interfaces Formed by ALD Metal Oxide Growth on Metal Layers

Type:
Journal
Info:
ECS Transactions, 80 (3) 87-95 (2017)
Date:
2017-06-01
DOI:
http://dx.doi.org/10.1149/08003.0087ecst

Author Information

Name Institution
Stephan AussenPeter-Grünberg Institute
Alexander HardtdegenPeter-Grünberg Institute
Katharina SkajaPeter-Grünberg Institute
Susanne Hoffmann-EifertPeter-Grünberg Institute

Films

Plasma HfO2

Hardware used: Oxford Instruments FlexAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Plasma TiO2

Hardware used: Oxford Instruments FlexAL
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 280C

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Interlayer
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Substrates

Pt
Ta
Hf

Notes

1400