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Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma

Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A117
Date:
2013-11-25
DOI:
http://dx.doi.org/10.1116/1.4842675

Author Information

Name Institution
Claudia RichterNaMLab gGmbH
Tony SchenkNaMLab gGmbH
Uwe SchroederNaMLab gGmbH
Thomas MikolajickNaMLab gGmbH

Films

Thermal HfO2

Hardware used: Oxford Instruments OpAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 80-300C

Thermal HfO2

Hardware used: Oxford Instruments OpAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature Range = 80-300C

Plasma HfO2

Hardware used: Oxford Instruments OpAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 80-300C

Film/Plasma Properties

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

TiN

Notes

Rapid thermal anneal
9