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Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection

Type:

Journal

Info:

Biosensors 2018, 8, 72

Date:

2018-07-28

DOI:

http://dx.doi.org/10.3390/bios8030072

Author Information

Name	Institution
Kristina A Malsagova	Institute of Biomedical Chemistry
Tatyana O Pleshakova	Institute of Biomedical Chemistry
Andrey F Kozlov	Institute of Biomedical Chemistry
Ivan D Shumov	Institute of Biomedical Chemistry
Mikhail A. Ilnitskii	Russian Academy of Sciences
Andrey V. Miakonkikh	Moscow Institute of Physics and Technology
Vladimir P. Popov	Russian Academy of Sciences
Konstantin V. Rudenko	Russian Academy of Sciences
Alexander V. Glukhov	Novosibirsk Semiconductor Device Plant and Design Bureau
Igor N. Kupriyanov	Russian Academy of Sciences
Nina D. Ivanova	Skryabin Moscow State Academy of Veterinary Medicine and Biotechnology
Alexander E. Rogozhin	Moscow Institute of Physics and Technology
Alexander I. Archakov	Institute of Biomedical Chemistry
Yuri D. Ivanov	Institute of Biomedical Chemistry

Films

Plasma HfO₂

Hardware used: Oxford Instruments FlexAL

TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)₄Hf

CAS#: 352535-01-4

CAS#: 7782-44-7

Deposition Temperature = 270C

Plasma Al₂O₃

Hardware used: Oxford Instruments FlexAL

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

CAS#: 7782-44-7

Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Silicon

Notes

1299