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Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Materials Science, v. 53, n. 10, p. 7214--7223 (2018)
Date:
2018-01-31
DOI:
http://dx.doi.org/10.1007/s10853-018-2099-5

Author Information

Name Institution
Yu. M. ChesnokovKurchatov Institute
Andrey V. MiakonkikhMoscow Institute of Physics and Technology
Alexander E. RogozhinMoscow Institute of Physics and Technology
Konstantin V. RudenkoMoscow Institute of Physics and Technology
A. L. VasilievKurchatov Institute

Films

Plasma HfO2

Hardware used: Oxford Instruments FlexAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-300C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

Si(100)

Notes

1300