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Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer

Type:
Journal
Info:
APPLIED PHYSICS LETTERS 97, 052904 (2010)
Date:
2010-08-06
DOI:
http://dx.doi.org/10.1063/1.3473773

Author Information

Name Institution
Aileen O'MahonyTyndall National Institute, University College Cork
Scott MonaghanTyndall National Institute, University College Cork
G. ProvenzanoTyndall National Institute, University College Cork
Ian M. PoveyTyndall National Institute, University College Cork
M. G. NolanTyndall National Institute, University College Cork
É. O'ConnorTyndall National Institute, University College Cork
Karim CherkaouiTyndall National Institute, University College Cork
S. B. NewcombGlebe Laboratories
F. CrupiUniversità  della Calabria
Martin E. PembleTyndall National Institute, University College Cork

Films

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Thermal HfO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

99