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Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A127
Date:
2013-12-04
DOI:
http://dx.doi.org/10.1116/1.4850175

Author Information

Name Institution
Wenyan WanChinese Academy of Sciences
Xinhong ChengChinese Academy of Sciences
Duo CaoChinese Academy of Sciences
Li ZhengChinese Academy of Sciences
Dawei XuChinese Academy of Sciences
Zhongjian WangChinese Academy of Sciences
Chao XiaChinese Academy of Sciences
Lingyan ShenChinese Academy of Sciences
Yuehui YuChinese Academy of Sciences
DaShen ShenUniversity of Alabama in Huntsville

Films

Plasma HfLaOx

Hardware used: Unknown
tris(bis[trimethylsilyl]amido) lanthanum, La[N(TMS)2]3
CAS#: 175923-07-6
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Philips CM200-FEG

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: Philips CM200-FEG

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1505A Semiconductor Device Analyzer

Substrates

p-type SOI(100)

Notes

Substrates pirahna and HF cleaned
Post metalization anneal
Rapid thermal anneal
6