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Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor

Type:
Journal
Info:
J. Vac. Sci. Technol. A 25(5), Sep/Oct 2007
Date:
2007-07-31
DOI:
http://dx.doi.org/10.1116/1.2753846

Author Information

Name Institution
S. B. S. HeilEindhoven University of Technology
J. L. van HemmenEindhoven University of Technology
Chris HodsonOxford Instruments
Nick SinghOxford Instruments
J. H. KlootwijkPhilips
Fred RoozeboomNXP Semiconductors Research
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma TiN

Hardware used: Oxford Instruments FlexAL
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma HfO2

Hardware used: Oxford Instruments FlexAL
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Thickness
Analysis: Optical Reflectivity
Diagnostic: Nanometrics Nanoscope 3000

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Areal Density
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Areal Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Philips X'Pert MPD Diffactometer

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Signatone

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4275A LCR

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4155B Semiconductor Parameter Analyzer

Substrates

Si(100)

Notes

HfO2 electrical characterization substrates HF dipped + DI rinsed.
Good description of FlexAL.
In situ SE.
58