In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential

Type:
Journal
Info:
J. Phys. D: Appl. Phys. 51 445201 2018
Date:
2018-09-14
DOI:
http://dx.doi.org/10.1088/1361-6463/aae182

Author Information

Name Institution
Jin Woo ParkSungkyunkwan University
Myeong Gyoon ChaeHanyang University
Doo San KimSungkyunkwan University
Won Oh LeeSungkyunkwan University
Han Dock SongWonik IPS Ltd.
Changhwan ChoiHanyang University
Geun Young YeomSungkyunkwan University

Films

Thermal HfO2

Hardware used: CN1 Atomic Premium
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Plasma TiN

Hardware used: CN1 Atomic Premium
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Contact Resistance
Analysis: TLM, Transmission Line Measurement
Diagnostic: Keithley 4200-SCS

Substrates

Silicon
HfO2

Notes

1287