About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential

Type:
Journal
Info:
J. Phys. D: Appl. Phys. 51 445201 2018
Date:
2018-09-14

Author Information

Name Institution
Jin Woo ParkSungkyunkwan University
Myeong Gyoon ChaeHanyang University
Doo San KimSungkyunkwan University
Won Oh LeeSungkyunkwan University
Han Dock SongWonik IPS Ltd.
Changhwan ChoiHanyang University
Geun Young YeomSungkyunkwan University

Films

Thermal HfO2


Plasma TiN

Hardware used: CN1 Atomic Premium


CAS#: 7664-41-7

Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Contact Resistance
Analysis: TLM, Transmission Line Measurement

Substrates

Silicon
HfO2

Notes

1287