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The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

Type:
Journal
Info:
The Journal of Chemical Physics 143, 164711 (2015)
Date:
2015-10-13
DOI:
http://dx.doi.org/10.1063/1.4934656

Author Information

Name Institution
Tyler KentUniversity of California - San Diego
Kechao TangStanford University
Varistha ChobpattanaUniversity of California - Santa Barbara (UCSB)
Muhammad Adi NegaraStanford University
Mary EdmondsUniversity of California - San Diego
William J. MitchellUniversity of California - Santa Barbara (UCSB)
Bhagawan SahuGlobal Foundries
Rohit GalatageGlobal Foundries
Ravi DroopadTexas State University
Paul C. McIntyreStanford University
Andrew C. KummelUniversity of California - San Diego

Films

Other HfO2

Hardware used: Oxford Instruments FlexAL
H2, Hydrogen
CAS#: 1333-74-0
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 120-300C

Other HfO2

Hardware used: Oxford Instruments FlexAL
H2, Hydrogen
CAS#: 1333-74-0
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 120-300C

Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Border Trap Densities, NBT
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Chemical Composition, Impurities
Analysis: STM, Scanning Tunneling Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Omicron Nanotechnology XM 1000 MkII/Sphera system

Substrates

InGaAs

Notes

Study of thermal HfO2 ALD following substrate preparation with H2 plasma or H2 plasma plus TMA exposures.
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