Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma

Type:
Journal
Info:
J. Phys. Commun. 4 (2020) 095013
Date:
2020-09-20
DOI:
http://dx.doi.org/10.1088/2399-6528/abb4b6

Author Information

Name Institution
Takeshi KitajimaNational Defense Academy
Hidemichi MinowaNational Defense Academy
Toshiki NakanoNational Defense Academy

Films

Plasma HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Ar, Argon
CAS#: 7440-37-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Plasma HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics HR4000CG-UV-NIR

Characteristic: Ion Flux
Analysis: Langmuir Probe
Diagnostic: Custom

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 1600 ESCA

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Omicron VT-AFM

Substrates

SiO2

Notes

1666